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Radiation Tolerance of Single-sided Silicon Microstrips

机译:单面硅微带的耐辐射性

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摘要

The RD20 collaboration is investigating the design and operation of an LHC inner tracking detector based on silicon microstrips. Measurements have been made on prototype detectors after irradiation with electrons, neutrons, photons, and protons for doses up to 5 Mrad and fluences up to 10(15) particles/cm(2). The annealing of effective doping changes caused by high neutron fluences, one of the major limits to detector lifetime at the LHC, is shown to be strongly inhibited by cooling below room temperature. Detailed results are presented on the critical issue of microstrip capacitance. We have also investigated bulk damage caused by high-energy protons, interstrip isolation after neutron irradiation, and MOS capacitors irradiated with electrons and photons.
机译:RD20合作正在研究基于硅微带的LHC内部跟踪检测器的设计和操作。在用电子,中子,光子和质子辐照后,已在原型探测器上进行了测量,测量的剂量最高为5 Mrad,注量最高为10(15)个粒子/ cm(2)。由高中子注量引起的有效掺杂变化的退火(在LHC上对探测器寿命的主要限制之一)被显示为在室温以下冷却会受到强烈抑制。在微带电容的关键问题上给出了详细的结果。我们还研究了由高能质子,中子辐照后的隔条隔离以及电子和光子辐照的MOS电容器造成的整体损坏。

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